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Researchers from the Low Energy Electronic Systems (LEE […]
Researchers from the Low Energy Electronic Systems (LEES) Interdisciplinary Research Group (IRG) of the Singapore-MIT Research and Technology Alliance (SMART), MIT's research company in Singapore, Massachusetts Institute of Technology (MIT) And the National University of Singapore (NUS) have found a way to quantify the distribution of composition fluctuations in indium gallium nitride (InGaN) quantum wells (QWs) at different indium concentrations.
At present, due to the poor performance of InGaN due to reduced efficiency in the red and amber spectrum, aluminum indium gallium phosphide (AlInGaP) materials are used instead of InGaN to manufacture red and amber LEDs. Understanding and overcoming the decline in efficiency is the first step in developing InGaN LEDs that cover the entire visible spectrum, which will greatly reduce production costs.